Work Function Extraction Of Indium Tin Oxide Films From Mosfet Devices

Abstract

Recent commercialization has increased the research interest in transparent conducting oxides like indium tin oxide being implemented in display technologies and sensors. A wide range of values (4.2-5 eV) for the work function of ITO films are reported in literature. In this paper, we present an approach to extract the work function of indium tin oxide films from MOSFET devices. RF sputtered indium tin oxide is used as a transparent gate electrode to fabricate n-MOSFET. For the fabrication of the MOSFET, a four-level mask is used. Electrical characterization is performed on these MOSFET devices. We obtained work function value in the range between 4.62-4.81 eV using this technique.

Publication Date

1-1-2018

Publication Title

ECS Journal of Solid State Science and Technology

Volume

7

Issue

3

Number of Pages

P87-P90

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1149/2.0081803jss

Socpus ID

85073396292 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85073396292

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