Solder Bond Degradation Of Fielded Pv Modules: Correlation Between Performance, Series Resistance And Electroluminescence Imaging

Keywords

electroluminescence imaging; fill factor; PV module; series resistance; silicon; solder bond degradation

Abstract

One of the most dominant degradation modes affecting the degradation rate and lifetime of field deployed modules is the degradation of interconnect-metallization system. The effect of solder bond degradation on the performance of three 10-year-old modules installed at a Florida site has been quantified through the cell series resistance (Rs) acquired from dark current-voltage (I-V) curves, which has been correlated with performance loss and electroluminescence (EL) intensity. The regions of poor solder joints are identified in EL image through high luminescence spots at interconnect ribbons because of current crowding. Each individual cell of the tested modules was accessed by cutting off a small segment of backsheet and soldering at cell interconnect. A spatial distribution of Rs in the modules is mapped, which demonstrated a good correlation with fill factor and output power as identified by two parallel trendlines. This implies that the performance loss of these fielded modules is significantly dictated by the solder bond degradation. Further, the ultraviolet fluorescence images showed an identical encapsulant browning pattern over the cells, indicating considerable current loss in all cells of the module.

Publication Date

6-1-2019

Publication Title

Conference Record of the IEEE Photovoltaic Specialists Conference

Number of Pages

2566-2570

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/PVSC40753.2019.8980678

Socpus ID

85081627198 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85081627198

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