Characterization Of The Metallization Induced Recombination Losses In Industrial Silicon Solar Cells

Keywords

c-Si; metal recombination; photoluminescence (PL); photovoltaic cells; screen printing

Abstract

Screen printing is the dominant technique for contact formation of industrial high-efficiency crystalline silicon solar cells. Accurately quantify the metallization induced recombination losses of the metal contacts (J0c) remain a hot topic. We present a comprehensive analysis of the J0c at the metal-Si interface as a function of the finger width and firing temperature. The dimension-dependent J0c properties are investigated and possible explanations are discussed. By extracting J0c directly from finished solar cells, it opens up the opportunity to quantify the contact recombination property in a fast and efficient manner, since no specially prepared midstream structures will be required for the analysis.

Publication Date

6-1-2019

Publication Title

Conference Record of the IEEE Photovoltaic Specialists Conference

Number of Pages

2769-2773

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/PVSC40753.2019.8981257

Socpus ID

85081540330 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85081540330

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