Effective Use Of Uv-Ozone Oxide In Silicon Solar Cell Applications

Keywords

capture cross section σ (or σ ) n p; effective carrier lifetime τ eff; interfacial trap density D it; saturation current density J 0; TEM; total fixed charge Q tot; UV-ozone

Abstract

It is long recognized that high-quality surface cleaning is critical for an increased performance of solar cells and semiconductor devices. In this contribution, the effectiveness of UV-ozone cleaning by comparing it against the industry standard RCAand UV-assisted deionized water (DI-O3) techniques has been demonstrated. UV-ozone cleaning results in an effective surface passivation quality that is comparable to both RCAand DI-O3 cleans, realizing a recombination current density (J0) of 7 fA cm−2 as compared to 5 and 8 fA cm−2 for RCAand DI-O3 cleans, respectively. Repeating the UV-ozone clean on samples (i.e., growing of UV-ozone oxide and stripping it in HF) more than twice results in a cleaning efficiency that is nearly identical to RCAclean. Based on a high resolution transmission electron microscopy analysis, the post-annealed thickness of the UV-ozone oxide layer was found to reduce in comparison to the pre-annealed condition. This is likely due to oxygen diffusion from the UV-ozone oxide layer into the overlaying AlOx layer. Additionally, it has been found that a reduction in UV-ozone oxide deposition time to just 5 min still provides a comparable cleaning efficiency to the RCAclean, and also results in good passivation quality (5–8 fA cm−2) on both planar and textured samples.

Publication Date

2-1-2019

Publication Title

Physica Status Solidi - Rapid Research Letters

Volume

13

Document Type

Letter

Personal Identifier

scopus

DOI Link

https://doi.org/10.1002/pssr.201800488

Socpus ID

85056401815 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85056401815

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