Discrimination Of Conductive Surface Electron States By Laser Terahertz Radiation In Pbse-A Base For Pb1-XSnXSe Topological Crystalline Insulators
Keywords
IV-VI semiconductor materials; photoelectro magnetic effect; surface conductivity; terahertz; Topological insulators (TIs)
Abstract
We report on the influence of oxidation on features of surface electron states in PbSe films-materials belonging to the family of topological crystalline insulators Pb1-xSnxSe. These states are detected through observation of the photoelectromagnetic effect induced by terahertz laser pulses. It is demonstrated that highly conductive surface electron states in PbSe are inherent to the semiconductor itself and are not related to the material oxidation. This allows excluding surface states induced by oxidation as a reason for high surface conductivity in topological crystalline insulators based on Pb1-xSnxSe.
Publication Date
7-1-2015
Publication Title
IEEE Transactions on Terahertz Science and Technology
Volume
5
Issue
4
Number of Pages
659-664
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/TTHZ.2015.2436712
Copyright Status
Unknown
Socpus ID
85027948637 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/85027948637
STARS Citation
Egorova, Svetlana G.; Chernichkin, Vladimir I.; Dudnik, Anna O.; Kasiyan, Vladimir A.; and Chernyak, Leonid, "Discrimination Of Conductive Surface Electron States By Laser Terahertz Radiation In Pbse-A Base For Pb1-XSnXSe Topological Crystalline Insulators" (2015). Scopus Export 2015-2019. 1084.
https://stars.library.ucf.edu/scopus2015/1084