Studies On Electrical Properties Of Rf Sputtered Deposited Boron Carbon Nitride Thin Films

Abstract

Boron carbon nitride (BCN) films were prepared by reactive magnetron sputtering from a B4C target and deposited to make metal-insulator-metal (MIM) sandwich structures using aluminum as the top and bottom electrodes. BCN films were deposited at various N2/Ar gas flow ratios, substrate temperatures. The electrical characterization of the MIM devices includes capacitance vs. voltage (C-V), current vs voltage, and breakdown voltage characteristics. The above characterizations were performed as a function of deposition parameters. By varying the nitrogen concentration in the deposited films and substrate deposition temperatures, the electrical properties of BCN can be tuned accordingly. BCN films having dielectric constant as low as 2.13 with high dielectric breakdown strength of 3.4 MV/cm and resistivity of 3 × 1012 Ω.cm were achieved.

Publication Date

1-1-2015

Publication Title

ECS Journal of Solid State Science and Technology

Volume

4

Issue

5

Number of Pages

N25-N29

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1149/2.0071505jss

Socpus ID

84928326513 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84928326513

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