Impact Of Ozone-Based Cleaning On Surface Recombination With Different Passivation Materials
Keywords
chemical oxidation; cleaning; passivation; surface preparation
Abstract
In this work, the impact of different ozone-based cleaning processes on the level of surface passivation achieved is determined and compared against the RCA cleaning processes. Two different passivation materials are used in this study, including hydrogenated amorphous silicon and silicon nitride plasma enhanced chemical vapor deposition (PECVD). Photoconductance measurements and calibrated photoluminescence imaging are used to evaluate the level of passivation achieved and spatial uniformity for the different cleaning processes.
Publication Date
12-14-2015
Publication Title
2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/PVSC.2015.7356333
Copyright Status
Unknown
Socpus ID
84961589482 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84961589482
STARS Citation
Davis, Kristopher O.; Kashkoush, Ismail; Blum, Adrienne; Ogutman, Kortan; and Schneller, Eric, "Impact Of Ozone-Based Cleaning On Surface Recombination With Different Passivation Materials" (2015). Scopus Export 2015-2019. 1473.
https://stars.library.ucf.edu/scopus2015/1473