Controllable Red And Blue Shifting Of Ingaasp Quantum Well Bandgap Energy For Photonic Device Integration

Keywords

Bandgap tuning; Photonic device integration; Quantum wells

Abstract

Wedemonstrate bandgap tuning of InGaAsP multiple quantum well structures by utilizing an impurity-free vacancy diffusion technique. Substantial modification of the bandgap energy toward the red and blue parts of the spectrum has been observed using SiO2/SiOyNx/SiNx capping layers and by controlling the associated oxygen and nitrogen content. The resulting degree of tuning, up to 120 nm red shift and 140 nmblue shift of the band-to-band wavelength emission, has been studied using room-temperature photoluminescence, in agreement with the emission spectra obtained from semiconductor optical amplifier waveguide strips.

Publication Date

8-1-2015

Publication Title

Materials Research Express

Volume

2

Issue

8

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1088/2053-1591/2/8/086302

Socpus ID

84954534986 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84954534986

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