3-D Scanning Mid-Ir Imaging Of Buried Structures Using Extremely Nondegenerate Two-Photon Absorption In A Gan Photodiode

Creator

Himansu S. Pattanaik, University of Central Florida
Matthew Reichert, University of Central Florida
David J. Hagan, University of Central Florida
Eric W. Van Stryland, University of Central Florida

Keywords

Absorption; Gallium nitride; Imaging; Logic gates; Photodiodes; Photonics

Abstract

We demonstrate a scanning 3-D IR imaging technique using extremely nondegenerate two-photon absorption in an uncooled GaN photodiode, and obtain ∼2 μm depth resolution at a wavelength of ∼5 μm in buried semiconductor structures.

Publication Date

8-10-2015

Publication Title

Conference on Lasers and Electro-Optics Europe - Technical Digest

Volume

2015-August

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Copyright Status

Unknown

Socpus ID

84954060080 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84954060080

STARS Citation

Pattanaik, Himansu S.; Reichert, Matthew; Hagan, David J.; and Van Stryland, Eric W., "3-D Scanning Mid-Ir Imaging Of Buried Structures Using Extremely Nondegenerate Two-Photon Absorption In A Gan Photodiode" (2015). Scopus Export 2015-2019. 1531.
https://stars.library.ucf.edu/scopus2015/1531