Electrical Properties Of Barium Strontium Titanate Thin Films For Embedded Capacitor Applications

Keywords

Annealing; BST; R.F. Sputtering; Thin Films

Abstract

This work focuses on the effect of deposition temperature and post deposition annealing (PDA) in different gas ambient on the electrical properties of R.F. sputter deposited ferroelectric Barium Strontium Titanate (Ba0.5Sr0.5TiO3) thin film capacitors. Approximately 2000Å of Barium Strontium Titanate (BST) thin film was deposited at different substrate temperatures (400, 450, 500 and 550°C) on cleaned silicon substrates. These BST films were then annealed separately in 100% N2, 100% O2 and 10% O2 + 90% N2 at 575°C in the same sputtering system (PVD anneal) as well as in a tube furnace.

Publication Date

6-24-2015

Publication Title

Conference Proceedings - IEEE SOUTHEASTCON

Volume

2015-June

Issue

June

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/SECON.2015.7132921

Socpus ID

84938152757 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84938152757

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