Energy And Area Analysis Of A Floating-Point Unit In 15Nm Cmos Process Technology
Keywords
15nm process technology; CMOS technology; energy aware design; Floating-Point; IEEE 754; Predictive Technology Model
Abstract
The continuous increase in transistor density based on Moore's Law has led us to Complementary Metal-Oxide Semiconductor (CMOS) technologies beyond 45nm process node. These highly-scaled process technologies offer improved density as well as a reduction in nominal supply voltage. New challenges also arise, such as relative proportion of leakage power in standby mode. In this paper, we present an analysis regarding different aspects of 45nm and 15nm technologies, such as power consumption and cell area to compare these two technologies. For this purpose, an IEEE 754 Single Precision Floating-Point Unit implementation is analyzed based on 45nm and 15nm technologies. The results have shown that using the 15nm technology we can have 4 times less energy and 3-fold smaller footprint.
Publication Date
6-24-2015
Publication Title
Conference Proceedings - IEEE SOUTHEASTCON
Volume
2015-June
Issue
June
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/SECON.2015.7132972
Copyright Status
Unknown
Socpus ID
84938118282 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84938118282
STARS Citation
Salehi, Soheil and Demara, Ronald F., "Energy And Area Analysis Of A Floating-Point Unit In 15Nm Cmos Process Technology" (2015). Scopus Export 2015-2019. 1565.
https://stars.library.ucf.edu/scopus2015/1565