Trans-Wafer Removal Of Metallization Using A Nanosecond Tm: Fiber Laser

Keywords

infrared lasers; semiconductors processing

Abstract

By utilizing photon energies considerably smaller than the semiconductors' energy band gap, space-selective modifications can be induced in semiconductors beyond the laser-incident surface. Previously, we demonstrated that back surface modifications could be produced in 500-600 μm thin Si and GaAs wafers independently without affecting the front surface. In this paper, we present our latest studies on trans-wafer processing of semiconductors using a self-developed nanosecond-pulsed thulium fiber laser operating at the wavelength 2 μm. A qualitative study of underlying physical mechanisms responsible for material modification was performed. We explored experimental conditions that will enable many potential applications such as trans-wafer metallization removal for PV cell edge isolation, selective surface annealing and wafer scribing. These processes were investigated by studying the influence of process parameters on the resulting surface morphology, microstructure and electric properties.

Publication Date

1-1-2015

Publication Title

Proceedings of SPIE - The International Society for Optical Engineering

Volume

9350

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1117/12.2079982

Socpus ID

84925651421 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84925651421

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