Invited Impact Of Vcsel Scaling On Speed And Bit Energy For High Speed Interconnects

Abstract

Removal of oxide layers from the VCSEL and incorporating AlAs in the low index mirror layers can dramatically decrease the VCSEL's thermal resistance, and has been shown to increase the stimulated emission rate [1]. These can be scaled down to a much smaller size and maintain high efficiency [2]. Therefore with smaller size, the electrical parasitics can also be reduced.

Publication Date

9-9-2015

Publication Title

2015 IEEE Summer Topicals Meeting Series, SUM 2015

Number of Pages

139-140

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/PHOSST.2015.7248234

Socpus ID

84960494112 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84960494112

This document is currently not available here.

Share

COinS