Title
Invited Impact Of Vcsel Scaling On Speed And Bit Energy For High Speed Interconnects
Abstract
Removal of oxide layers from the VCSEL and incorporating AlAs in the low index mirror layers can dramatically decrease the VCSEL's thermal resistance, and has been shown to increase the stimulated emission rate [1]. These can be scaled down to a much smaller size and maintain high efficiency [2]. Therefore with smaller size, the electrical parasitics can also be reduced.
Publication Date
9-9-2015
Publication Title
2015 IEEE Summer Topicals Meeting Series, SUM 2015
Number of Pages
139-140
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/PHOSST.2015.7248234
Copyright Status
Unknown
Socpus ID
84960494112 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84960494112
STARS Citation
Deppe, D.; Zhao, G.; Li, M.; and Yang, X., "Invited Impact Of Vcsel Scaling On Speed And Bit Energy For High Speed Interconnects" (2015). Scopus Export 2015-2019. 1782.
https://stars.library.ucf.edu/scopus2015/1782