Design And Characterization Of Esd Solutions With Emc Robustness For Automotive Applications

Keywords

Automotive; BCD; Design window; Diode; ESD; High voltage; LDMOS; PNP; SOI

Abstract

Electrostatic discharge (ESD) protection design and characterization with consideration of harmful electromagnetic compatibility (EMC) events for automotive interface networks are presented. The EMC events discussed in this paper include: electrostatic discharge (ESD), electrical fast transient (EFT), surge and automotive environment transients. Key electrical parameters defined in those standards are extracted and compared. To provide efficient protection against these EMC requirements, two major automotive process technologies namely, full-dielectric isolation or silicon on insulator (SOI) and junction isolation (JI), are compared with respect to the leakage current, latch-up immunity, design complexity, EMC handling capability and cost. Protection solutions for EMC-compliance issues are reviewed at both the off-chip and on-chip levels. Trade-offs among several off- and on-chip protection devices with varying degrees of area efficiency and robustness are analyzed.

Publication Date

1-1-2015

Publication Title

Microelectronics Reliability

Volume

55

Issue

11

Number of Pages

2236-2246

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.microrel.2015.09.018

Socpus ID

84945559212 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84945559212

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