On-Chip Modulation In The Mid-Infrared With Silicon-On- Lithium-Niobate Photonics

Abstract

Mid-infrared (3.39 μm) optical modulators are demonstrated for the first time on the silicon-on-lithium-niobate platform, with a VΠ.L of 26 V.cm, extinction ratio of 8 dB, and on-chip insertion losses of 3.3 dB. © OSA 2015.

Publication Date

5-4-2015

Publication Title

CLEO: Science and Innovations, CLEO-SI 2015

Number of Pages

2267-

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1364/CLEO_SI.2015.STu4I.5

Socpus ID

84935443863 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84935443863

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