Title

Emerging Heterogeneous Integrated Photonic Platforms On Silicon

Keywords

Electrooptics; Gallium arsenide; Germanium; Indium phosphide; Integrated optics; Integrated photonics; Lithium niobate; Mid-infrared photonics; Nonlinear optics; Optical modulators; Optoelectronics; Photodetectors; Semiconductor lasers; Silicon; Silicon dioxide; Silicon nitride; Silicon photonics; Tantalum pentoxide

Abstract

Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI) waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths) and feasibility of electrically-injected lasers (at least at room temperature). More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III-V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for different purposes with the common feature of integrating them on a single substrate, most notably silicon.

Publication Date

1-1-2015

Publication Title

Nanophotonics

Volume

4

Issue

1

Number of Pages

143-164

Document Type

Editorial Material

Personal Identifier

scopus

DOI Link

https://doi.org/10.1515/nanoph-2014-0024

Socpus ID

84930620433 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84930620433

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