An Explicit Surface Potential Calculation And Compact Current Model For Algan/Gan Hemts

Keywords

AlGaN/GaN high-electron mobility transistor (HEMT); compact model; drain current; self-heating effect

Abstract

In this letter, a new compact model for the AlGaN/GaN high-electron mobility transistors developed based on explicit solutions to the Fermi level and the surface potential is presented. Its simple calculation and high accuracy in predicting the surface potential and current-voltage characteristics make the model ideal for circuit simulation applications. This surface-potential-based compact model accounts for the self-heating effect by considering the temperature-dependent free-carrier mobility. The model is verified against numerical results and measured data under a wide range of bias conditions.

Publication Date

2-1-2015

Publication Title

IEEE Electron Device Letters

Volume

36

Issue

2

Number of Pages

108-110

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/LED.2015.2388706

Socpus ID

84921835383 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84921835383

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