Spin-Transfer Torque Devices For Logic And Memory: Prospects And Perspectives

Keywords

Boolean logic; magnetic tunnel junction (MTJ); neuromorphic computing; non-Boolean logic; nonvolatile memory; post-CMOS; spin-transfer torque (STT); spintronics

Abstract

As CMOS technology begins to face significant scaling challenges, considerable research efforts are being directed to investigate alternative device technologies that can serve as a replacement for CMOS. Spintronic devices, which utilize the spin of electrons as the state variable for computation, have recently emerged as one of the leading candidates for post-CMOS technology. Recent experiments have shown that a nano-magnet can be switched by a spin-polarized current and this has led to a number of novel device proposals over the past few years. In this paper, we provide a review of different mechanisms that manipulate the state of a nano-magnet using current-induced spin-transfer torque and demonstrate how such mechanisms have been engineered to develop device structures for energy-efficient on-chip memory and logic.

Publication Date

1-1-2016

Publication Title

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volume

35

Issue

1

Number of Pages

1-22

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TCAD.2015.2481793

Socpus ID

84961737548 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84961737548

This document is currently not available here.

Share

COinS