Two-Dimensional Lateral Heterojunction Through Bandgap Engineering Of Mos2 Via Oxygen Plasma

Keywords

2D materials; bandgap tuning; electrical properties; lateral heterojunction; oxygen plasma

Abstract

The present study explores the structural, optical (photoluminescence (PL)), and electrical properties of lateral heterojunctions fabricated by selective exposure of mechanically exfoliated few layer two-dimensional (2D) molybdenum disulfide (MoS2) flakes under oxygen (O2)-plasma. Raman spectra of the plasma exposed MoS2 flakes show a significant loss in the structural quality due to lattice distortion and creation of oxygen-containing domains in comparison to the pristine part of the same flake. The PL mapping evidences the complete quenching of peak A and B consistent with a change in the exciton states of MoS2 after the plasma treatment, indicating a significant change in its band gap properties. The electrical transport measurements performed across the pristine and the plasma-exposed MoS2 flake exhibit a gate tunable current rectification behavior with a rectification ratio up to 1.3 × 103 due to the band-offset at the pristine and plasma-exposed MoS2 interface. Our Raman, PL, and electrical transport data confirm the formation of an excellent lateral heterojunction in 2D MoS2 through its bandgap modulation via oxygen plasma.

Publication Date

7-8-2016

Publication Title

Journal of Physics Condensed Matter

Volume

28

Issue

36

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1088/0953-8984/28/36/364002

Socpus ID

84979598048 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84979598048

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