Study Of Copper Diffusion In Rf Magnetron Sputtered Boron Carbon Nitride Thin Films

Abstract

Secondary-ion-mass spectrometry (SIMS) analysis was conducted to study the copper (Cu) diffusion into boron carbon nitride (BCN) thin films. BCN, being a dense low-k material, has a potential to be the interlayer dielectric in ultralarge scale integration processes. Hence, the diffusion of Cu into the BCN films is a major reliability factor considered in this study. SIMS analysis performed on the BCN films at different annealing temperatures confirmed very low degree of copper diffusion. Copper diffusion increased with an increase in boron concentration of the BCN film.

Publication Date

7-1-2016

Publication Title

Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

Volume

34

Issue

4

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1116/1.4948399

Socpus ID

84968809076 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84968809076

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