No-Snapback Silicon-Controlled Rectifier For Electrostatic Discharge Protection Of High-Voltage Ics

Keywords

high temperature; holding voltage; leakage current; SCR; trigger voltage

Abstract

In this letter, we develop a no-snapback silicon-controlled rectifier (NS-SCR) in a 0.35- μm BCD technology. This device is constructed by embedding in a typical SCR a p-type/intrinsic/n-type diode as the trigger element and two highly doped extension regions as parts of the bases of the parasitic bipolar transistors. These added features allow for a high electric field to be maintained at the reverse biased n/p junction in the electrostatic discharge (ESD) current path, prevent the onset of strong conductivity modulation, and result in a no-snapback transmission line pulsing I - V characteristic. Stacking the NS-SCR's offers an ESD protection solution that is area-efficient, robust, and latch-up immune. The high temperature effect on the leakage current of NS-SCR is also studied.

Publication Date

11-1-2015

Publication Title

IEEE Electron Device Letters

Volume

36

Issue

11

Number of Pages

1121-1123

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/LED.2015.2479612

Socpus ID

84946547413 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84946547413

This document is currently not available here.

Share

COinS