No-Snapback Silicon-Controlled Rectifier For Electrostatic Discharge Protection Of High-Voltage Ics
Keywords
high temperature; holding voltage; leakage current; SCR; trigger voltage
Abstract
In this letter, we develop a no-snapback silicon-controlled rectifier (NS-SCR) in a 0.35- μm BCD technology. This device is constructed by embedding in a typical SCR a p-type/intrinsic/n-type diode as the trigger element and two highly doped extension regions as parts of the bases of the parasitic bipolar transistors. These added features allow for a high electric field to be maintained at the reverse biased n/p junction in the electrostatic discharge (ESD) current path, prevent the onset of strong conductivity modulation, and result in a no-snapback transmission line pulsing I - V characteristic. Stacking the NS-SCR's offers an ESD protection solution that is area-efficient, robust, and latch-up immune. The high temperature effect on the leakage current of NS-SCR is also studied.
Publication Date
11-1-2015
Publication Title
IEEE Electron Device Letters
Volume
36
Issue
11
Number of Pages
1121-1123
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/LED.2015.2479612
Copyright Status
Unknown
Socpus ID
84946547413 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84946547413
STARS Citation
Wang, Zhixin; Klebanov, Maxim; Cooper, Richard B.; Liang, Wei; and Courtney, Sebastian, "No-Snapback Silicon-Controlled Rectifier For Electrostatic Discharge Protection Of High-Voltage Ics" (2015). Scopus Export 2015-2019. 233.
https://stars.library.ucf.edu/scopus2015/233