Band Structure Characterization Of Ws2 Grown By Chemical Vapor Deposition

Abstract

Growth by chemical vapor deposition (CVD) leads to multilayer WS2 of very high quality, based on high-resolution angle-resolved photoemission spectroscopy. The experimental valence band electronic structure is considered to be in good agreement with that obtained from density functional theory calculations. We find the spin-orbit splitting at the K̄ point to be 420 ± 20 meV with a hole effective mass of -0.35 ± 0.02 me for the upper spin-orbit component (the branch closer to the Fermi level) and -0.43 ± 0.07 me for the lower spin-orbit component. As predicted by theory, a thickness-dependent increase of bandwidth is observed at the top of the valence band, in the region of the Brillouin zone center. The top of the valence band of the CVD-prepared films exhibits a substantial binding energy, consistent with n-type behavior, and in agreement with transistor characteristics acquired using devices incorporating the same WS2 material.

Publication Date

6-20-2016

Publication Title

Applied Physics Letters

Volume

108

Issue

25

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1063/1.4954278

Socpus ID

84975889820 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84975889820

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