Reliability Performance Of A 70-Ghz Mixer In 65-Nm Technology

Keywords

Double-balanced mixer; gate oxide breakdown; Gilbert cell; hot electron; millimeter wave; reliability

Abstract

A downconversion mixer using the double-balanced Gilbert cell structure is fabricated using 65-nm CMOS technology. The mixer maximum conversion gain is -0.93 dB, IF output power at the 1-dB compression point is -4 dBm, and IIP3 is 6.12 dBm with IF at 1 GHz. In addition, mixer reliability subjected to dynamic stress at elevated VDD is examined experimentally. Transistor measurement was investigated to provide physical insight into the stress effect on device and circuit degradation.

Publication Date

3-1-2016

Publication Title

IEEE Transactions on Device and Materials Reliability

Volume

16

Issue

1

Number of Pages

101-104

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TDMR.2016.2523881

Socpus ID

84963615172 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84963615172

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