A New High Holding Voltage Dual-Direction Scr With Optimized Segmented Topology

Keywords

dual directional silicon controlled rectifier (DDSCR); Electrostatic discharge (ESD); high holding voltage; segmented technique

Abstract

While silicon controlled rectifiers (SCRs) are highly robust electrostatic discharge (ESD) protection devices, they typically are not suited for high-voltage ESD protection due to their inherently low holding voltage and thus vulnerability to latch-up threat. In this letter, a new high holding voltage dual-direction SCR (NHHVDDSCR) with a small area and optimized topology is developed in a 0.18-μm CMOS technology. The results of the NHHVDDSCR and other SCR devices measured from the transmission line pulsing are compared and discussed. It is shown that the NHHVDDSCR can possess a relatively high and adjustable holding voltage, as well as an acceptable failure current for robust ESD protection of high voltage applications.

Publication Date

10-1-2016

Publication Title

IEEE Electron Device Letters

Volume

37

Issue

10

Number of Pages

1311-1313

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/LED.2016.2598063

Socpus ID

84989895205 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84989895205

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