Ultra-Low Power Successive Approximation Analog-To-Digital Converter Using Emerging Tunnel Field Effect Transistor Technology

Keywords

Analog-to-Digital Converter (ADC); Successive-Approximation Register (SAR); Temperature-stability; Tunnel FET (TFET); Ultra-low-power

Abstract

This paper explores advantages of tunnel field effect transistor (TFET) analog-to-digital converters (ADCs) on energy efficiency and temperature stability. A fully-differential SAR ADC is designed using 20 nm TFET technology with doubled input swing and controlled comparator input common-mode voltage. Simulation results show that under VDD of 0.1 V the ADC is able to achieve an energy of 0.1 pJ, which is one- to three-orders of magnitude lower than that of most fabricated CMOS ADCs. The temperature variation of ENOB and energy of the ADC ranging from -55 °C to 125 °C are 24% and 31.5%, respectively. Also, The SAR ADC has the maximum +0.1/-0.2 LSB DNL and +0.4/-0.3 LSB INL.

Publication Date

9-1-2016

Publication Title

Journal of Low Power Electronics

Volume

12

Issue

3

Number of Pages

218-226

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1166/jolpe.2016.1445

Socpus ID

84984697465 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84984697465

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