Optical And Electron Beam Studies Of Gamma-Irradiated Algan/Gan High-Electron-Mobility Transistors

Keywords

activation energy; diffusion length; gamma-irradiation; High-electron-mobility transistors; lifetime

Abstract

The impact of 60Co gamma-irradiation on n-channel AlGaN/GaN high-electron-mobility transistors was studied by means of temperature-dependent electron beam-induced current (EBIC) and cathodoluminescence (CL) techniques. For the doses up to ∼250 Gy, an enhancement of minority carrier transport was observed as evident from the EBIC measurements. This enhancement is associated with internal electron irradiation induced by the primary gamma photons. For the doses above ∼250 Gy, deterioration in minority carrier transport was explained by carrier scattering on radiation-induced defects. It is shown that calculated activation energy from the EBIC and CL measurements follows exactly the same trend, which implies that the same underlying phenomenon is responsible for observed findings.

Publication Date

3-3-2016

Publication Title

Radiation Effects and Defects in Solids

Volume

171

Issue

3-4

Number of Pages

223-230

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1080/10420150.2016.1170018

Socpus ID

84966711322 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84966711322

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