Dispersion Of Nondegenerate Nonlinear Refraction In Semiconductors

Abstract

We use our recently developed beam-deflection technique to measure the dispersion of the nondegenerate nonlinear refraction (NLR) of direct-gap semiconductors. The magnitude and sign of the NLR coefficient n2(ωa; ωb) are determined over a broad spectral range for different values of nondegeneracy. In the extremely nondegenerate case, n2(ωa; ωb) is positively enhanced near the two-photon absorption (2PA) edge and is significantly larger than its degenerate counterpart, suggesting applications for nondegenerate all-optical switching. At higher photon energies within the 2PA regime, n2(ωa; ωb) switches sign to negative over a narrow wavelength range. This strong anomalous nonlinear dispersion provides large phase modulation of a femtosecond pulse with bandwidth centered near the zero-crossing frequency. The measured nondegenerate dispersion closely follows our earlier predictions based on nonlinear Kramers-Kronig relations [Sheik-Bahae et. al, IEEE J. Quant. Electron. 30, 249 (1994)].

Publication Date

10-31-2016

Publication Title

Optics Express

Volume

24

Issue

22

Number of Pages

24907-24920

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1364/OE.24.024907

Socpus ID

84995920153 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84995920153

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