Robust Protection Device For Electrostatic Discharge/Electromagnetic Interference In Industrial Interface Applications

Keywords

Electrostatic discharge (ESD); industrial transceivers; silicon controlled rectifier; TCAD

Abstract

A new silicon-controlled rectifier (SCR) fabricated in a 30-V mixed-signal CDMOS (CMOS/DMOS) technology is presented. This device allows for robust electromagnetic interference (EMI) and electrostatic discharge (ESD) voltage clamp for high-speed industrial interface applications operating in variable voltage swing range (e.g., from -7 to +12 V). The device robustness is demonstrated under different pulsewidths, stress, and temperature. Analysis of the device physics is complemented via mixed-mode numerical simulations. The 200 × 200 μm2 device designed in an annular configuration achieves > ±8 kV IEC robustness and low clamping voltage at ± 20 A.

Publication Date

6-1-2016

Publication Title

IEEE Transactions on Device and Materials Reliability

Volume

16

Issue

2

Number of Pages

263-265

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TDMR.2016.2530701

Socpus ID

84976293836 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84976293836

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