Injection-Locked Semiconductor Laser-Based Frequency Comb For Modulation Applications In Rf Analog Photonics

Abstract

A linearized intensity modulator for periodic and pulsed light is proposed and demonstrated. The free carrier plasma effect has been used to modulate the refractive index of the phase section of a three-section mode-locked laser. If injection locked, the modulation induces an arcsine phase response on the three-section mode-locked laser. By introducing this mode-locked laser into a Mach-Zehnder interferometer biased at quadrature, one can realize a true linear intensity modulation. This novel laser suppresses any unwanted amplitude modulation and increases the performance of the linearized intensity modulator. Experimental results have provided a record low static Iπ of 0.39 mA and a spur-free dynamic range of 75 dB.Hz2/3.

Publication Date

7-1-2016

Publication Title

Optics Letters

Volume

41

Issue

13

Number of Pages

2990-2993

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1364/OL.41.002990

Socpus ID

84978476522 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84978476522

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