Processing Effect On Via Extrusion For Tsvs In Three-Dimensional Interconnects: A Comparative Study

Keywords

Electroplating; Thermal stress; Through-silicon via (TSV); Via extrusion

Abstract

A comparative study has been performed to investigate the processing effects on via extrusion for through-silicon vias (TSVs) in 3-D integration. This paper is focused on three TSV structures with identical geometry but different processing conditions. The thermomechanical behavior, microstructure, via extrusion, and additives incorporated during electroplating are examined by various techniques, including the electron backscatter diffraction and the time-of-flight secondary ionmass spectroscopy. By comparing the stress, material, and via extrusion behaviors of the TSV structures, the effect of processing conditions, particularly electroplating and postplating annealing, on via extrusion are discussed.

Publication Date

12-1-2016

Publication Title

IEEE Transactions on Device and Materials Reliability

Volume

16

Issue

4

Number of Pages

465-469

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TDMR.2016.2591945

Socpus ID

85003952909 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85003952909

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