Low-Temperature Sintering Behavior Of Tio2 Activated With Cuo

Keywords

Activated sintering; Dielectric ceramics; Grain boundary diffusion; Low-temperature sintering; TiO 2

Abstract

In TiO2-CuO systems, low-temperature sinterability was investigated by a conventional sintering method. Sintering temperatures were set at under 950oC, at which the volume diffusion is inactive. The temperatures are less than the melting point of Ag (961oC), which is often used as an internal conductor in low-temperature co-fired ceramic technology. To optimize the amount of CuO dopant, various dopant contents were added. The optimum level for enhanced densification was 2 wt% CuO. Excess dopants were segregated to the grain boundaries. The segregated dopants supplied a high diffusion path, by which grain boundary diffusion improved. At lower temperatures in the solid state region, grain boundary diffusion was the principal mass transport mechanism for densification. The enhanced grain boundary diffusion, therefore, improved densification. In this regard, the results of this study prove that the sintering mechanism was the same as that of activated sintering.

Publication Date

11-1-2016

Publication Title

Journal of the Korean Ceramic Society

Volume

53

Issue

6

Number of Pages

682-688

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.4191/kcers.2016.53.6.682

Socpus ID

85016790741 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85016790741

This document is currently not available here.

Share

COinS