Robust Trench Buried-Guard-Ring-Based Termination For Charge Balanced Devices

Keywords

Breakdown; buried P-ring; charge balance; edge termination; fast recovery diode; IGBT; junction curvature; mobile ions; power MOSFET; trench; trench

Abstract

A major limitation on the performance of high-voltage power semiconductor is the edge termination of the device. It is critical to maintain the breakdown voltage of the device without compromising the reliability of the device by controlling the surface electric field. A good termination structure is critical to the reliability of the power semiconductor device. The proposed termination uses a novel trench MOS with buried guard ring structure to completely eliminate high surface electric field in the silicon region of the termination. The proposed termination scheme was applied toward a 1350-V fast recovery diode and showed excellent results. It achieved 98% of parallel plane breakdown voltage, with low leakage and no shifts after high-temperature reverse bias testing due to mobile ion contamination from packaging mold compound.

Publication Date

3-1-2016

Publication Title

IEEE Transactions on Device and Materials Reliability

Volume

16

Issue

1

Number of Pages

69-73

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TDMR.2016.2515507

Socpus ID

84964402885 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84964402885

This document is currently not available here.

Share

COinS