Flexible Nanoporous Wo3-X Nonvolatile Memory Device

Keywords

flexible memory; nanoporous; resistive random access memory; WO memory 3-x

Abstract

Flexible resistive random access memory (RRAM) devices have attracted great interest for future nonvolatile memories. However, making active layer films at high temperature can be a hindrance to RRAM device fabrication on flexible substrates. Here, we introduced a flexible nanoporous (NP) WO3-x RRAM device using anodic treatment in a room-temperature process. The flexible NP WO3-x RRAM device showed bipolar switching characteristics and a high ION/IOFF ratio of ∼105. The device also showed stable retention time over 5 × 105 s, outstanding cell-to-cell uniformity, and bending endurance over 103 cycles when measured in both the flat and the maximum bending conditions.

Publication Date

8-23-2016

Publication Title

ACS Nano

Volume

10

Issue

8

Number of Pages

7598-7603

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1021/acsnano.6b02711

Socpus ID

84983399558 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84983399558

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