Title

Cu2Znsns4 Thin-Films Grown By Dip-Coating: Effects Of Annealing

Keywords

Chemical synthesis; Cu ZnSnS 2 4; Raman scattering spectroscopy; Thin films; X-ray diffraction

Abstract

Recently Cu2ZnSnS4, i.e. Copper Zinc Tin Sulphide (CZTS), has emerged as a potential candidate for low-cost solar photovoltaics (PV) material because of it is relatively non-toxic and ingredient elements are earth abundant. However, achieving phase controlled, stoichiometric film of CZTS using low-cost technique is the key issue in development of CZTS based solar cell. Here, we report a study on structural and optical properties of CZTS films grown by dip-coating in view of its application as an absorber in thin film solar cells. The films were deposited by dipping glass substrates into the solution prepared by dissolving cation metal salts and thiourea in methanol. It is followed by drying the films in air at fixed temperature. The dip coated films were then annealed at 623 K, 723 K and 823 K. The influence of annealing on various structural and optical properties of the films were investigated by means of X-ray diffraction (XRD), Raman scattering spectroscopy, Scanning electron microscopy (SEM) and Diffused reflection spectroscopy. It was observed that the film annealed at 823 K shows good quality Kesterite structure of CZTS with preferred orientation of (112), (220) and (312) planes as revealed by the XRD pattern. The diffuse reflection spectra confirm the direct band-gap of 1.42 eV, which is very close to the optimum value for the semiconductor material as an absorber in solar-cells. Raman scattering with two different excitation wavelengths showed that other binary phases including the parasitic phases such as ZnS were not present. It also confirmed the characteristics signature of dominant CZTS phase in the film.

Publication Date

4-5-2016

Publication Title

Journal of Alloys and Compounds

Volume

663

Number of Pages

842-847

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.jallcom.2015.11.233

Socpus ID

84953439215 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84953439215

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