Cmos Transistor Reliability And Variability Mechanisms

Creator

Jiann Shiun Yuan, University of Central Florida

Abstract

This chapter talks about device reliability mechanisms such as hot electron injection, gate oxide breakdown, negative bias temperature instability and process variation.

Publication Date

1-1-2016

Publication Title

SpringerBriefs in Applied Sciences and Technology

Issue

9789811008825

Number of Pages

3-9

Document Type

Article; Book Chapter

Personal Identifier

scopus

DOI Link

https://doi.org/10.1007/978-981-10-0884-9_2

Copyright Status

Unknown

Socpus ID

85027674981 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85027674981

STARS Citation

Yuan, Jiann Shiun, "Cmos Transistor Reliability And Variability Mechanisms" (2016). Scopus Export 2015-2019. 3759.
https://stars.library.ucf.edu/scopus2015/3759