Mid-Ir Kerr Frequency Comb Generation From 4000 To 10000 Nm In A Cmos-Compatible Germanium Microcavity

Creator

Yuhao Guo, Tianjin University
Jing Wang, Tianjin University
Zhaohong Han, Massachusetts Institute of Technology
Lionel C. Kimerling, Massachusetts Institute of Technology
Anuradha M. Agarwal, Massachusetts Institute of Technology

Abstract

Ge/Si material combination is proposed for microresonator-based frequency combs in mid-IR. A new dispersion engineering approach is used, enabling octave-spanning mode-locked comb generation with a pump power as low as 190 mW.

Publication Date

12-16-2016

Publication Title

2016 Conference on Lasers and Electro-Optics, CLEO 2016

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1364/cleo_at.2016.jth2a.92

Copyright Status

Unknown

Socpus ID

85010694769 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85010694769

STARS Citation

Guo, Yuhao; Wang, Jing; Han, Zhaohong; Kimerling, Lionel C.; and Agarwal, Anuradha M., "Mid-Ir Kerr Frequency Comb Generation From 4000 To 10000 Nm In A Cmos-Compatible Germanium Microcavity" (2016). Scopus Export 2015-2019. 3929.
https://stars.library.ucf.edu/scopus2015/3929