Novel Structure Embedded With Dual-Diodes And Silicon Controlled Rectifier For High Speed I/O Applications

Keywords

Capacitance; DD-SCR; ESD; High Speed I/O; It2 and TLP; Overshot; Ron

Abstract

Design trade-offs of a novel structure embedded with a silicon controlled rectifier and dual-diode (DD-SCR) for high speed I/O applications are presented. A metal-bounded DD-SCR exhibiting a high failure current (It2), small on-state resistance (Ron), low voltage overshoot and low parasitic capacitance is introduced as an optimal device for such applications in advanced CMOS processes. Comprehensive characterizations including capacitance and current vs. voltage measured using transmission line pulsing (TLP) and very-fast TLP (VFTLP) are undertaken to demonstrate the DD-SCR performance.

Publication Date

10-12-2016

Publication Title

Proceedings - International NanoElectronics Conference, INEC

Volume

2016-October

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/INEC.2016.7589443

Socpus ID

84992702658 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84992702658

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