Extremely Nondegenerate Nonlinear Responses Of Semiconductors

Abstract

Direct-gap semiconductors show very large increases in the two-photon absorption (2PA) coefficient, α2, and in the nonlinear refractive index, n2, when the photon energies become greatly different. For example, the 2PA coefficient of ZnSe increases 270x over that for the degenerate α2 for photon energies having a ratio of ~10. This is the case where the sum of the photon energies in the two cases are equal, i.e., average photon energies equal. These nonlinear coefficients are measured using standard pump-probe techniques. Additionally, the n2 for ZnSe increases by ~10x for a similar photon energy ratio. We measure this enhanced nonlinear refraction using a new beam-deflection method which will be discussed. We will show results for several semiconductors along with their modeling including both frequency degenerate and nondegenerate nonlinearities. These enhancements are in good agreement with our theoretical predictions and allow for IR detection using wide-gap semiconductors, 2-photon 3D LIDAR imaging, possible enhancement of all-optical switching, and the possibility of a 2-photon laser. This latter potential comes from the fact that 2-photon stimulated emission is the inverse process of 2PA. .

Publication Date

8-15-2016

Publication Title

Optics InfoBase Conference Papers

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1364/LAOP.2016.LW2A.1

Socpus ID

85019526860 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85019526860

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