Title
Material Response Of Semiconductors Irradiated With Ir Ultrashort Laser Pulses
Abstract
We utilize near- and mid-IR ultrafast laser radiation to investigate the processing of crystalline silicon with different dopants. A numerical model is adopted to simulate the material response depending on the wavelength and the dopant concentration.
Publication Date
1-7-2016
Publication Title
2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
Volume
2
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/CLEOPR.2015.7375986
Copyright Status
Unknown
Socpus ID
84963999522 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84963999522
STARS Citation
Mingareev, Ilya; Ramme, Mark; and Richardson, Martin, "Material Response Of Semiconductors Irradiated With Ir Ultrashort Laser Pulses" (2016). Scopus Export 2015-2019. 4086.
https://stars.library.ucf.edu/scopus2015/4086