Material Response Of Semiconductors Irradiated With Ir Ultrashort Laser Pulses

Creator

Ilya Mingareev, University of Central Florida
Mark Ramme, University of Central Florida
Martin Richardson, University of Central Florida

Abstract

We utilize near- and mid-IR ultrafast laser radiation to investigate the processing of crystalline silicon with different dopants. A numerical model is adopted to simulate the material response depending on the wavelength and the dopant concentration.

Publication Date

1-7-2016

Publication Title

2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015

Volume

2

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/CLEOPR.2015.7375986

Copyright Status

Unknown

Socpus ID

84963999522 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84963999522

STARS Citation

Mingareev, Ilya; Ramme, Mark; and Richardson, Martin, "Material Response Of Semiconductors Irradiated With Ir Ultrashort Laser Pulses" (2016). Scopus Export 2015-2019. 4086.
https://stars.library.ucf.edu/scopus2015/4086