Nondegenerate Two-And Three-Photon Nonlinearities In Semiconductors
Keywords
Multiphoton Absorption; Nonlinear Optics; Quantum Wells; Semiconductors
Abstract
Two-photon absorption, 2PA, in semiconductors is enhanced by two orders of magnitude due to intermediate-state resonance enhancement, ISRE, for very nondegenerate (ND) photon energies. Associated with this enhancement in loss is enhancement of the nonlinear refractive index, n2. Even larger enhancement of three-photon absorption is calculated and observed. These large nonlinearities have implications for applications including ND two-photon gain and twophoton semiconductor lasers. Calculations for enhancement of ND-2PA in quantum wells is also presented showing another order of magnitude increase in 2PA. Potential devices include room temperature gated infrared detectors for LIDAR and all-optical switches.
Publication Date
1-1-2016
Publication Title
Proceedings of SPIE - The International Society for Optical Engineering
Volume
9835
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1117/12.2223286
Copyright Status
Unknown
Socpus ID
84983354740 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84983354740
STARS Citation
Reichert, Matthew; Zhao, Peng; Pattanaik, Himansu S.; Hagan, David J.; and Van Stryland, Eric W., "Nondegenerate Two-And Three-Photon Nonlinearities In Semiconductors" (2016). Scopus Export 2015-2019. 4158.
https://stars.library.ucf.edu/scopus2015/4158