Very Small Snapback Silicon-Controlled Rectifier For Electrostatic Discharge Protection In 28 Nm Processing

Keywords

Electrostatic discharge (ESD); Silicon-controlled rectifier (SCR); Small snapback

Abstract

A novel silicon-controlled rectifier (SCR)-based device with very small snapback is proposed in this paper. New features including an embedded gate-to-VDD PMOS (GDPMOS) and lateral n-p-n BJT are used to achieve low trigger and high holding voltages suitable for electrostatic discharge (ESD) protection of 28-nm CMOS technology with very narrow ESD operation windows. Measured results show an ESD operation window of less than 1 V. TCAD simulation is also carried out to demonstrate the underlying physical mechanisms.

Publication Date

6-1-2016

Publication Title

Microelectronics Reliability

Volume

61

Number of Pages

106-110

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.microrel.2015.12.038

Socpus ID

84953220919 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84953220919

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