Title
Very Small Snapback Silicon-Controlled Rectifier For Electrostatic Discharge Protection In 28 Nm Processing
Keywords
Electrostatic discharge (ESD); Silicon-controlled rectifier (SCR); Small snapback
Abstract
A novel silicon-controlled rectifier (SCR)-based device with very small snapback is proposed in this paper. New features including an embedded gate-to-VDD PMOS (GDPMOS) and lateral n-p-n BJT are used to achieve low trigger and high holding voltages suitable for electrostatic discharge (ESD) protection of 28-nm CMOS technology with very narrow ESD operation windows. Measured results show an ESD operation window of less than 1 V. TCAD simulation is also carried out to demonstrate the underlying physical mechanisms.
Publication Date
6-1-2016
Publication Title
Microelectronics Reliability
Volume
61
Number of Pages
106-110
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1016/j.microrel.2015.12.038
Copyright Status
Unknown
Socpus ID
84953220919 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84953220919
STARS Citation
Wang, Weihuai; Jin, Hao; Guo, Wei; Dong, Shurong; and Liang, Wei, "Very Small Snapback Silicon-Controlled Rectifier For Electrostatic Discharge Protection In 28 Nm Processing" (2016). Scopus Export 2015-2019. 4190.
https://stars.library.ucf.edu/scopus2015/4190