Interfacial Structure And Passivation Properties Of Al2O3 On Silicon

Abstract

Al2O3 passivation films deposited on Si(100) via atmospheric chemical vapor deposition were studied using transmission electron microscopy coupled with electron energy loss spectroscopy and correlated with changes in defect density (Dit), flatband voltage (Vfb), and surface recombination velocity (Seff). The as-deposited films exhibit a high degree of interfacial strain and relatively high Dit, and both are significantly reduced with annealing. A low surface recombination velocity (≈9 cm/s) was attained when annealed at 500 oC for 30 min. and the formation of an amorphous Si-O-Al (a silicate glass) interfacial layer between the Si and the Al2O3 film.

Publication Date

11-18-2016

Publication Title

Conference Record of the IEEE Photovoltaic Specialists Conference

Volume

2016-November

Number of Pages

1163-1168

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/PVSC.2016.7749797

Socpus ID

85003758595 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85003758595

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