3D Stress Reconstruction From Birefringence Measurement For Photovoltaic Si Ingots

Keywords

birefringence; ingot; retardation; Silicon

Abstract

Residual stress or other defects in silicon CZ ingot can lead to cracks in wafers cut from that ingot, themselves resulting in PV modules to perform poorly or even to fail. The ability to detect high levels of stress or crystallographic defects before processing an ingot would help reduce cost and improve reliability. However, analyzing stress in an ingot is a difficult problem. In this paper, we present a way of using birefringence measurement to build a 3D reconstruction of the ingot. This method allows a better understanding of residual stress distribution in a given ingot and will assist, we hope, the PV industry in the growing of silicon ingot.

Publication Date

11-18-2016

Publication Title

Conference Record of the IEEE Photovoltaic Specialists Conference

Volume

2016-November

Number of Pages

1541-1544

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/PVSC.2016.7749877

Socpus ID

85003728146 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85003728146

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