Optical Loss Analysis Of Silicon Solar Cells Using Spatial Resolved Quantum Efficiency And Reflectance Measurements
Abstract
IQE data has long been a key analysis tool for c-Si cell research. Transitioning from single point measurements to spatially resolved measurements allows for the detailed analysis of quality and uniformity of the processes and materials used in cell manufacturing. This work explores how spatially resolved reflectance data can be analyzed to provide valuable information regarding the front surface texturing, rear surface properties, and ARC properties of completed solar cells.
Publication Date
11-18-2016
Publication Title
Conference Record of the IEEE Photovoltaic Specialists Conference
Volume
2016-November
Number of Pages
2515-2517
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/PVSC.2016.7750099
Copyright Status
Unknown
Socpus ID
85003545095 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/85003545095
STARS Citation
Schneller, Eric J.; Davis, Kristopher O.; Ogutman, Kortan; and Schoenfeld, Winston V., "Optical Loss Analysis Of Silicon Solar Cells Using Spatial Resolved Quantum Efficiency And Reflectance Measurements" (2016). Scopus Export 2015-2019. 4341.
https://stars.library.ucf.edu/scopus2015/4341