Quantitative Analysis Of Crystalline Silicon Wafer Pv Modules By Electroluminescence Imaging
Abstract
Electroluminescence (EL) images are normally used for qualitative analysis of photovoltaic (PV) modules. In this work, detailed quantitative analysis of crystalline silicon wafer PV modules is achieved using EL imaging. Rather than visually detecting problems, the method presented in this work allows people to construct a series of dark current-voltage (I-V) curves for each individual solar cell in the PV module by calibrating EL signals of the cells. The I-V characteristics of each solar cell can then be extracted, and the problems happened to individual cells can be accurately detected and quantified. This method is proved to be very effective in the degradation analysis of PV modules.
Publication Date
11-18-2016
Publication Title
Conference Record of the IEEE Photovoltaic Specialists Conference
Volume
2016-November
Number of Pages
3688-3692
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/PVSC.2016.7750365
Copyright Status
Unknown
Socpus ID
85003674306 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/85003674306
STARS Citation
Guo, Siyu; Schneller, Eric; Davis, Kristopher O.; and Schoenfeld, Winston V., "Quantitative Analysis Of Crystalline Silicon Wafer Pv Modules By Electroluminescence Imaging" (2016). Scopus Export 2015-2019. 4420.
https://stars.library.ucf.edu/scopus2015/4420