Tunability Of The Topological Nodal-Line Semimetal Phase In Zrsix -Type Materials (X= S, Se, Te) Tunability Of The Topological Nodal-Line ... M. Mofazzel Hosen Et Al.

Abstract

The discovery of a topological nodal-line (TNL) semimetal phase in ZrSiS has invigorated the study of other members of this family. Here, we present a comparative electronic structure study of ZrSiX (where X=S, Se, Te) using angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. Our ARPES studies show that the overall electronic structure of ZrSiX materials comprises the diamond-shaped Fermi pocket, the nearly elliptical-shaped Fermi pocket, and a small electron pocket encircling the zone center (Γ) point, the M point, and the X point of the Brillouin zone, respectively. We also observe a small Fermi surface pocket along the M-Γ-M direction in ZrSiTe, which is absent in both ZrSiS and ZrSiSe. Furthermore, our theoretical studies show a transition from nodal-line to nodeless gapped phase by tuning the chalcogenide from S to Te in these material systems. Our findings provide direct evidence for the tunability of the TNL phase in ZrSiX material systems by adjusting the spin-orbit coupling strength via the X anion.

Publication Date

4-3-2017

Publication Title

Physical Review B

Volume

95

Issue

16

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1103/PhysRevB.95.161101

Socpus ID

85017235091 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85017235091

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