Pdge Contact Fabrication On Se-Doped Ge

Keywords

Contact; Germanium; Palladium; Reaction; Selenium

Abstract

PdGe contact fabrication on Se-doped Ge(001) is investigated. PdGe thin film resistivity is two times lower if the PdGe layer is grown by Pd reactive diffusion on Se-doped Ge, compared to PdGe layer grown in the same condition on Se-free Ge. The phase sequence and the phase growth kinetics during Pd reactive diffusion with Ge are not modified by the presence of Se atoms. However, the PdGe film texture is different with Se, and Se segregates at the PdGe/Ge interface. These results suggest that Se atoms may be used to produce efficient contacts on n-type Ge.

Publication Date

10-1-2017

Publication Title

Scripta Materialia

Volume

139

Number of Pages

104-107

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.scriptamat.2017.06.029

Socpus ID

85021169357 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85021169357

This document is currently not available here.

Share

COinS