Mid-Ir Supercontinuum Generated In Low-Dispersion Ge-On-Si Waveguides Pumped By Sub-Ps Pulses

Abstract

Ge-on-Si is an attractive material platform for mid-IR broadband sources on a chip because of its wide transparency window, high Kerr nonlinearity and CMOS compatibility. We present a low-loss Ge-on-Si waveguide with flat and low dispersion from 3 to 11 µm, which enables a coherent supercontinuum from 2 to 12 µm, generated using a sub-ps pulsed pump. We show that 700-fs pump pulses with a low peak power of 400 W are needed to generate such a wide supercontinuum, and the waveguide length is around 5.35 mm.

Publication Date

7-10-2017

Publication Title

Optics Express

Volume

25

Issue

14

Number of Pages

16116-16122

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1364/OE.25.016116

Socpus ID

85022100096 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85022100096

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