A Surface-Potential-Based Drain Current Compact Model For A-Ingazno Thin-Film Transistors In Non-Degenerate Conduction Regime

Keywords

Amorphous InGaZnO (a-InGaZnO); Compact model; Drain current; Surface potential; Thin film transistors

Abstract

A physics-based drain current compact model for amorphous InGaZnO (a-InGaZnO) thin-film transistors (TFTs) is proposed. As a key feature, the surface potential model accounts for both exponential tail and deep trap densities of states, which are essential to describe a-InGaZnO TFT electrical characteristics. The surface potential is solved explicitly without the process of amendment and suitable for circuit simulations. Furthermore, based on the surface potential, an explicit closed-form expression of the drain current is developed. For the cases of the different operational voltages, surface potential and drain current are verified by numerical results and experimental data, respectively. As a result, our model can predict DC characteristics of a-InGaZnO TFTs.

Publication Date

11-1-2017

Publication Title

Solid-State Electronics

Volume

137

Number of Pages

38-43

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.sse.2017.07.016

Socpus ID

85030105255 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85030105255

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