Transmission Electron Microscopy Studies Of Electron-Selective Titanium Oxide Contacts In Silicon Solar Cells

Keywords

crystalline silicon; electron-selective contact; solar cell; TiO 2

Abstract

In this study, the cross-section of electron-selective titanium oxide (TiO2) contacts for n-type crystalline silicon solar cells were investigated by transmission electron microscopy. It was revealed that the excellent cell efficiency of 21.6% obtained on n-type cells, featuring SiO2/TiO2/Al rear contacts and after forming gas annealing (FGA) at 350°C, is due to strong surface passivation of SiO2/TiO2 stack as well as low contact resistivity at the Si/SiO2/TiO2 heterojunction. This can be attributed to the transformation of amorphous TiO2 to a conducting TiO2-x phase. Conversely, the low efficiency (9.8%) obtained on cells featuring an a-Si:H/TiO2/Al rear contact is due to severe degradation of passivation of the a-Si:H upon FGA.

Publication Date

10-1-2017

Publication Title

Microscopy and Microanalysis

Volume

23

Issue

5

Number of Pages

900-904

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1017/S1431927617012417

Socpus ID

85032579530 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85032579530

This document is currently not available here.

Share

COinS